Bipolar Transistors - BJT
| Товар | Цена | Maximum Operating Temperature | Manufacturer | Package/Case | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Gain Bandwidth Product fT | Pd - Power Dissipation | Minimum Operating Temperature | Brand | Configuration | Continuous Collector Current | DC Collector/Base Gain hFE Min | DC Current Gain hFE Max | Factory Pack Quantity | Height | Length | Maximum DC Collector Current | Mounting Style | Packaging | Product Category | Product Type | Qualification | RoHS | Series | Subcategory | Technology | Unit Weight | Width | |
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-252-3 | PNP | - 32 V | - 40 V | - 5 V | - 0.8 V | 110 MHz | 10 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-252-3 | PNP | - 32 V | - 40 V | - 5 V | - 0.8 V | 110 MHz | 10 W | - 55 C | Diodes Incorporated | Single | 120 | 270 at - 500 mA, - 3 V | 2500 | - 3 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | AEC-Q101 | Details | 2DB11 | Transistors | Si | 330 mg | |||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | PNP | 20 V | 30 V | 6 V | 100 MHz | 1 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | PNP | - 20 V | - 30 V | - 6 V | - 250 mV | 100 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | 180 at 500 mA, 2 V | 180 at 500 mA, 2 V | 2500 | 1.5 mm | 4.5 mm | - 5 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | 2DB13 | Transistors | Si | 52 mg | 2.48 mm | |||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | PNP | 20 V | 20 V | 6 V | 220 MHz | 1 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | PNP | - 12 V | - 15 V | - 6 V | - 65 mV | 140 MHz | 900 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | PNP | - 12 V | - 15 V | - 6 V | - 250 mV | 180 MHz | 2 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | PNP | - 30 V | - 30 V | - 6 V | - 370 mV | 200 MHz | 2 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-3 | NPN | 50 V | 60 V | 7 V | 180 MHz | 300 mW | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-523-3 | NPN | 50 V | 60 V | 7 V | 400 mV | 180 MHz | 150 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-523-3 | NPN | 50 V | 60 V | 7 V | 400 mV | 180 MHz | 150 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-523-3 | NPN | 50 V | 60 V | 7 V | 400 mV | 180 MHz | 150 mW | - 55 C | Diodes Incorporated | Single | 270 at 1 mA, 6 V | 3000 | 0.75 mm | 1.6 mm | 150 mA | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | 2DC46 | Transistors | Si | 2 mg | 0.8 mm | ||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 50 V | 60 V | 7 V | 105 mV | 180 MHz | 2 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 32 V | 40 V | 5 V | 280 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | 82 | 2500 | 1.5 mm | 4.5 mm | 1 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | 2DD16 | Transistors | Si | 52 mg | 2.48 mm | |||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 32 V | 40 V | 5 V | 280 MHz | 1 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 32 V | 40 V | 6 V | 400 mV | 280 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 32 V | 40 V | 5 V | 220 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | 120 | 2500 | 1.5 mm | 4.5 mm | 2 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | AEC-Q101 | Details | 2DD17 | Transistors | Si | 52 mg | 2.48 mm | ||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 32 V | 40 V | 5 V | 800 mV | 220 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | 180 at 500 mA, 3 V | 2500 | 1.5 mm | 4.5 mm | 2.5 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | 2DD17 | Transistors | Si | 52 mg | 2.48 mm | ||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 20 V | 50 V | 6 V | 1 V | 220 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 20 V | 50 V | 6 V | 1 V | 220 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | 180 at 500 mA, 2 V | 180 at 500 mA, 2 V | 2500 | 1.5 mm | 4.5 mm | 10 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | 2DD2 | Transistors | Si | 52 mg | 2.5 mm | |||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-323-3 | NPN | 12 V | 15 V | 6 V | 200 mV | 260 MHz | 500 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-323-3 | NPN | 12 V | 15 V | 6 V | 200 mV | 260 MHz | 500 mW | - 55 C | Diodes Incorporated | Single | 270 at 200 mA, 2 V | 270 at 200 mA, 2 V | 3000 | 1 mm | 2.15 mm | 3 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | 2DD2 | Transistors | Si | 5 mg | 1.3 mm | |||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-323-3 | NPN | 30 V | 30 V | 6 V | 350 mV | 270 MHz | 500 mW | - 55 C |
