Главная Каталог Полупроводниковые приборы Транзисторы Bipolar Transistors - BJT

Bipolar Transistors - BJT

Товар	Цена	Maximum Operating Temperature	Manufacturer	Package/Case	Transistor Polarity	Collector- Emitter Voltage VCEO Max	Collector- Base Voltage VCBO	Emitter- Base Voltage VEBO	Collector-Emitter Saturation Voltage	Gain Bandwidth Product fT	Pd - Power Dissipation	Minimum Operating Temperature	Brand	Configuration	Continuous Collector Current	DC Collector/Base Gain hFE Min	DC Current Gain hFE Max	Factory Pack Quantity	Height	Length	Maximum DC Collector Current	Mounting Style	Packaging	Product Category	Product Type	Qualification	RoHS	Series	Subcategory	Technology	Unit Weight	Width
MJD31T4G MJD31T4G ON Semiconductor / Fairchild	поиск предложений	+ 150 C	ON Semiconductor / Fairchild	TO-252-3	NPN	40 V	40 V	5 V	1.2 V	3 MHz	1.56 W	- 65 C
MJD32C-13 MJD32C-13 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-252-3	PNP	100 V	100 V	6 V	1.2 V	3 MHz	1.56 W	- 55 C
MJD32C-13 MJD32C-13 Diodes Incorporated Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-252-3	PNP	100 V	100 V	6 V	1.2 V	3 MHz	1560 mW	- 55 C	Diodes Incorporated	Single				2500	2.4 mm	6.8 mm	3 A	SMD/SMT	Reel	Bipolar Transistors - BJT	BJTs - Bipolar Transistors		Details	MJD32C	Transistors	Si	330 mg	6.2 mm
MJD32CG MJD32CG ON Semiconductor / Fairchild	поиск предложений	+ 150 C	ON Semiconductor / Fairchild	TO-252-3	PNP	100 V	100 V	5 V	1.2 V	3 MHz	1.56 W	- 65 C
MJD32CJ MJD32CJ Nexperia	поиск предложений	+ 150 C	Nexperia	DPAK-3	PNP	- 100 V	- 100 V	- 6 V	1.2 V	3 MHz	15 W	- 55 C
MJD32CQ-13 MJD32CQ-13 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-252-3	PNP	- 100 V	- 100 V	- 6 V	- 1.2 V	3 MHz	15 W	- 55 C
MJD32CQ-13 MJD32CQ-13 Diodes Incorporated Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-252-3	PNP	- 100 V	- 100 V	- 6 V	- 1.2 V	3 MHz	15 W	- 55 C	Diodes Incorporated	Single	- 3 A	10	50	2500			- 3 A	SMD/SMT	Reel	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	AEC-Q101	Details		Transistors	Si	330 mg
MJD32CRLG MJD32CRLG ON Semiconductor / Fairchild	поиск предложений	+ 150 C	ON Semiconductor / Fairchild	TO-252-3	PNP	100 V	100 V	5 V	1.2 V	3 MHz	15 W	- 65 C
MJD32CT4 MJD32CT4 STMicroelectronics	поиск предложений	+ 150 C	STMicroelectronics	TO-252-3	PNP	100 V	100 V	5 V	- 1.2 V		15 W	- 65 C
MJD32CT4-A MJD32CT4-A STMicroelectronics	поиск предложений	+ 150 C	STMicroelectronics	TO-252-3	PNP	100 V	100 V	5 V			15 W	- 65 C
MJD32CT4G MJD32CT4G ON Semiconductor / Fairchild	поиск предложений	+ 150 C	ON Semiconductor / Fairchild	TO-252-3	PNP	100 V	100 V	5 V	1.2 V	3 MHz	1.56 W	- 65 C
MJD32CUQ-13 MJD32CUQ-13 Diodes Incorporated	поиск предложений		Diodes Incorporated
MJD32RLG MJD32RLG ON Semiconductor / Fairchild	поиск предложений	+ 150 C	ON Semiconductor / Fairchild	TO-252-3	PNP	40 V	40 V	5 V	1.2 V	3 MHz	1.56 W	- 65 C
MJD32T4G MJD32T4G ON Semiconductor / Fairchild	поиск предложений	+ 150 C	ON Semiconductor / Fairchild	TO-252-3	PNP	40 V	40 V	5 V	1.2 V	3 MHz	1.56 W	- 65 C
MJD340-13 MJD340-13 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	DPAK-3	NPN	300 V	300 V	3 V			1.56 W	- 55 C
MJD340G MJD340G ON Semiconductor	поиск предложений	+ 150 C	ON Semiconductor	TO-252-3	NPN	300 V	300 V	3 V	1 V		15 W	- 65 C
MJD340RLG MJD340RLG ON Semiconductor	поиск предложений	+ 150 C	ON Semiconductor	TO-252-3	NPN	300 V	300 V	3 V	1 V		15 W	- 65 C
MJD340T4 MJD340T4 STMicroelectronics	поиск предложений	+ 150 C	STMicroelectronics	TO-252-3	NPN	300 V	300 V	3 V			15 W	- 65 C
MJD340T4G MJD340T4G ON Semiconductor	поиск предложений	+ 150 C	ON Semiconductor	TO-252-3	NPN	300 V	300 V	3 V	1 V		15 W	- 65 C
MJD350-13 MJD350-13 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	DPAK-3	PNP	300 V	300 V	3 V			1.56 W	- 55 C
MJD350-13 MJD350-13 Diodes Incorporated Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	DPAK-3	PNP	300 V	300 V	3 V			1560 mW	- 55 C	Diodes Incorporated	Single		30	30 at 50 mA, 10 V	2500	2.4 mm	6.8 mm	0.5 A	SMD/SMT	Reel	Bipolar Transistors - BJT	BJTs - Bipolar Transistors		Details	MJD350	Transistors	Si	260,400 mg	6.2 mm
MJD350T4 MJD350T4 STMicroelectronics	поиск предложений	+ 150 C	STMicroelectronics	TO-252-3	PNP	300 V	300 V	3 V			15 W	- 65 C
MJD350T4G MJD350T4G ON Semiconductor	поиск предложений	+ 150 C	ON Semiconductor	TO-252-3	PNP	300 V	300 V	3 V	1 V		15 W	- 65 C
MJD41CRLG MJD41CRLG ON Semiconductor	поиск предложений	+ 150 C	ON Semiconductor	DPAK-3	NPN	100 V	100 V	5 V	1.5 V	3 MHz	20 W	- 65 C
MJD41CT4G MJD41CT4G ON Semiconductor	поиск предложений	+ 150 C	ON Semiconductor	DPAK-3	NPN	100 V	100 V	5 V	1.5 V	3 MHz	20 W	- 65 C