HGTG10N120BND
HGTG10N120BND
Артикул:
Описание:
HGTG10N120BND
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.45 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
17 A
Power Dispation
298 W
Описание
Insulated-gate bipolar transistor-HGTG10N120BND: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.45 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
17 A
Power Dispation
298 W
Описание
Insulated-gate bipolar transistor-HGTG10N120BND: Биполярный транзистор с изолированным затвором