История:
UPTB15e3/TR13
1SG085HN1F43I2LGAS
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Полупроводниковые приборы
Дискретные полупроводниковые приборы
Дискретные модули и модули питания
Диодные модули
Диодные модули
| Товар | Цена | Brand | Configuration | Fall Time | Id - Continuous Drain Current | Manufacturer | Maximum Operating Temperature | Minimum Operating Temperature | Mounting Style | Package/Case | Pd - Power Dissipation | Product | Product Category | Rds On - Drain-Source Resistance | Rise Time | RoHS | Series | Technology | Transistor Polarity | Type | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Vds - Drain-Source Breakdown Voltage | Vf - Forward Voltage | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Vr - Reverse Voltage | |
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поиск предложений
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IXYS | IXYS | Discrete Semiconductor Modules | Details | DSA300I100NA | ||||||||||||||||||||||
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поиск предложений
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IXYS | Single | IXYS | + 150 C | - 40 C | SMD/SMT | TO-263-3 | 62 W | Diode Power Modules | Discrete Semiconductor Modules | Details | N-Channel | Fast Recovery | 1.7 V | 600 V | ||||||||||||
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поиск предложений
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IXYS | Single | IXYS | + 125 C | - 40 C | SMD/SMT | TO-263-3 | 105 W | Diode Power Modules | Discrete Semiconductor Modules | Details | N-Channel | 1.05 V | 0.78 V | 600 V | ||||||||||||
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поиск предложений
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Подробности | ||||||||||||||||||||||||||
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поиск предложений
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IXYS | Single | IXYS | + 150 C | - 55 C | SMD/SMT | TO-263-3 | 95 W | Diode Power Modules | Discrete Semiconductor Modules | Details | N-Channel | Fast Recovery | 3.96 V | 1 V | 1200 V | |||||||||||
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поиск предложений
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поиск предложений
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IXYS | Single | IXYS | + 150 C | - 55 C | SMD/SMT | TO-263-3 | 95 W | Diode Power Modules | Discrete Semiconductor Modules | Details | N-Channel | Fast Recovery | 2.99 V | 0.98 V | 600 V | |||||||||||
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поиск предложений
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IXYS | Single | IXYS | + 150 C | - 55 C | Through Hole | TO-220-2 | 165 W | Diode Power Modules | Discrete Semiconductor Modules | Details | N-Channel | Fast Recovery | 4.66 V | 1.26 V | 1200 V | |||||||||||
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поиск предложений
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поиск предложений
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Подробности | ||||||||||||||||||||||||||
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поиск предложений
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IXYS | Single | IXYS | + 150 C | - 55 C | SMD/SMT | TO-252-3 | 55 W | Diode Power Modules | Discrete Semiconductor Modules | Details | N-Channel | Fast Recovery | 3.3 V | 1.13 V | 600 V | |||||||||||
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поиск предложений
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IXYS | IXYS | SMD/SMT | SOT-227B | Discrete Semiconductor Modules | Details | DSI2x55-16 | Switching Diode | 1.2 V | 1600 V | |||||||||||||||||
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поиск предложений
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Infineon Technologies | Infineon | Discrete Semiconductor Modules | Details | Diode Bridge Module | ||||||||||||||||||||||
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поиск предложений
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Infineon Technologies | Single | Infineon | + 150 C | - 40 C | Screw Mount | Diode Power Modules | Discrete Semiconductor Modules | Details | Diode Bridge Module | N-Channel | Rectifier Diode Module | 1.11 V | 0.75 V | |||||||||||||
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поиск предложений
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Infineon Technologies | Infineon | Screw Mount | DZ540 | Discrete Semiconductor Modules | N | CoolSiC Mosfet Module | Rectifier Diode Module | 2200 V | ||||||||||||||||||
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поиск предложений
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N | ||||||||||||||||||||||||||
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поиск предложений
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Infineon Technologies | Infineon | Screw Mount | DZ600 | Discrete Semiconductor Modules | N | Trench/Fieldstop IGBT4 - P4 | Rectifier Diode Module | 1200 V | ||||||||||||||||||
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поиск предложений
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N | ||||||||||||||||||||||||||
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поиск предложений
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Infineon Technologies | Infineon | Screw Mount | DZ600 | Discrete Semiconductor Modules | N | Rectifier Diode Module | Rectifier Diode Module | 1600 V | ||||||||||||||||||
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поиск предложений
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Infineon Technologies | Infineon | Discrete Semiconductor Modules | Details | Thyristor and Diode Module | |||||||||||||||||||||
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поиск предложений
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Подробности | |||||||||||||||||||||||||
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поиск предложений
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Infineon Technologies | SCR/Diode Phase Control | 90 mA | Infineon | + 135 C | - 40 C | Screw Mount | BG-PB60ECO-1 | Thyristor Power Modules | Discrete Semiconductor Modules | Details | Discrete IGBT6.2 | N-Channel | Phase Control Thyristor Module | 0.85 V | 2200 V | |||||||||||
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поиск предложений
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Infineon Technologies | SCR/Diode Phase Control | Infineon | + 135 C | - 40 C | Screw Mount | BG-PB60ECO-1 | Diode Power Modules | Discrete Semiconductor Modules | Details | Discrete IGBT6.2 | N-Channel | Phase Control Thyristor Module | 0.8 V | 1600 V | ||||||||||||
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поиск предложений
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Infineon Technologies | SCR/Diode Phase Control | 100 mA | Infineon | + 135 C | - 40 C | Screw Mount | BG-PB60ECO-1 | Thyristor Power Modules | Discrete Semiconductor Modules | Details | Discrete IGBT6.2 | N-Channel | Phase Control Thyristor Module | 0.85 V | 2200 V | |||||||||||
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поиск предложений
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Infineon Technologies | SCR/Diode Phase Control | Infineon | + 135 C | - 40 C | Screw Mount | BG-PB60ECO-1 | Diode Power Modules | Discrete Semiconductor Modules | Details | Discrete IGBT6.2 | N-Channel | Phase Control Thyristor Module | 0.8 V | 1600 V |
