Тактовый буфер
| Товар | Цена | Duty Cycle - Max | Height | Input Type | Length | Manufacturer | Max Output Freq | Maximum Input Frequency | Maximum Operating Temperature | Minimum Operating Temperature | Moisture Sensitive | Number of Outputs | Operating Supply Current | Output Type | Propagation Delay - Max | Supply Voltage - Max | Supply Voltage - Min | Unit Weight | Width | |
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поиск предложений
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55 % | HCSL | Diodes Incorporated | 100 MHz | 400 MHz | + 85 C | - 40 C | 4 Output | 130 mA | HCSL | 6.5 ns | 3.465 V | 3.135 V | 4,105 g | |||||
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поиск предложений
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55 % | HCSL | Diodes Incorporated | 100 MHz | 400 MHz | + 85 C | - 40 C | 4 Output | 130 mA | HCSL | 6.5 ns | 3.465 V | 3.135 V | ||||||
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поиск предложений
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55 % | HCSL | Diodes Incorporated | 100 MHz | 400 MHz | + 85 C | - 40 C | 4 Output | 130 mA | HCSL | 6.5 ns | 3.465 V | 3.135 V | 367,568 mg | |||||
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поиск предложений
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55 % | HCSL | Diodes Incorporated | 100 MHz | 400 MHz | + 85 C | - 40 C | 4 Output | 130 mA | HCSL | 6.5 ns | 3.465 V | 3.135 V | ||||||
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поиск предложений
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55 % | HCSL | Diodes Incorporated | 100 MHz | 400 MHz | + 85 C | - 40 C | 4 Output | 130 mA | HCSL | 6.5 ns | 3.465 V | 3.135 V | ||||||
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поиск предложений
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55 % | HCSL | Diodes Incorporated | 100 MHz | + 70 C | 0 C | 4 Output | 200 mA | HCSL | 6.5 ns | 3.465 V | 3.135 V | 286,100 mg | ||||||
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поиск предложений
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55 % | HCSL | Diodes Incorporated | 100 MHz | 400 MHz | + 85 C | - 40 C | 8 Output | 250 mA | HCSL | 8 ns | 3.465 V | 3.135 V | 1,640 g | |||||
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поиск предложений
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57 % | HCSL | Diodes Incorporated | 100 MHz | 400 MHz | + 70 C | 0 C | 8 Output | 250 mA | HCSL | 6 ns | 3.465 V | 3.135 V | 411,650 mg | |||||
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поиск предложений
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57 % | HCSL | Diodes Incorporated | 100 MHz | 400 MHz | + 85 C | - 40 C | 8 Output | 250 mA | HCSL | 8 ns | 3.465 V | 3.135 V | 715,250 mg | |||||
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поиск предложений
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57 % | HCSL | Diodes Incorporated | 100 MHz | 400 MHz | + 70 C | 0 C | 8 Output | 250 mA | HCSL | 6 ns | 3.465 V | 3.135 V | ||||||
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поиск предложений
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Diodes Incorporated | ||||||||||||||||||
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поиск предложений
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- | CMOS | Diodes Incorporated | 250 MHz | 250 MHz | + 105 C | - 40 C | 2 Output | 10 mA | CMOS | 4 ns | 3.465 V | 1.425 V | ||||||
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поиск предложений
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- | CMOS | Diodes Incorporated | 250 MHz | 250 MHz | + 105 C | - 40 C | 4 Output | CMOS | 5 ns | 3.465 V | 1.425 V | |||||||
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поиск предложений
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Diodes Incorporated | ||||||||||||||||||
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поиск предложений
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Diodes Incorporated | ||||||||||||||||||
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поиск предложений
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Diodes Incorporated | ||||||||||||||||||
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поиск предложений
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Diodes Incorporated | ||||||||||||||||||
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поиск предложений
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Diodes Incorporated | ||||||||||||||||||
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поиск предложений
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60 % | HCSL, LVDS, LVHSTL, LVPECL, SSTL | Diodes Incorporated | 800 MHz | 800 MHz | + 85 C | - 40 C | 2 Output | 60 mA | LVPECL | 2 ns | 3.6 V | 3 V | ||||||
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поиск предложений
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60 % | HCSL, LVDS, LVHSTL, LVPECL, SSTL | Diodes Incorporated | 800 MHz | 800 MHz | + 85 C | - 40 C | 2 Output | 60 mA | LVPECL | 2 ns | 3.6 V | 3 V | ||||||
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поиск предложений
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52 % | LVCMOS, LVTTL | Diodes Incorporated | 500 MHz | 500 MHz | + 85 C | - 40 C | 4 Output | 130 mA | LVPECL | 1.5 ns | 3.6 V | 3 V | 191 mg | |||||
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поиск предложений
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60 % | 1.05 mm | LVCMOS, LVTTL | 6.6 mm | Diodes Incorporated | 500 MHz | 500 MHz | + 85 C | - 40 C | 4 Output | 60 mA | LVPECL | 1.9 ns | 3.6 V | 3 V | 191 mg | 4.5 mm | ||
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поиск предложений
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52 % | LVCMOS, LVTTL | Diodes Incorporated | 500 MHz | 500 MHz | + 85 C | - 40 C | 4 Output | 130 mA | LVPECL | 1.5 ns | 3.465 V | 3.135 V | 191 mg | |||||
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поиск предложений
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52 % | Diodes Incorporated | 266 MHz | + 85 C | - 40 C | 4 Output | 85 mA | LVPECL | 1600 ps | 3.465 V | 2.375 V | 191 mg | |||||||
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поиск предложений
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52 % | Diodes Incorporated | 266 MHz | + 85 C | - 40 C | 4 Output | 85 mA | LVPECL | 1600 ps | 3.465 V | 2.375 V | 191 mg |
