FF50R12RT4
FF50R12RT4
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.15 V
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
50 A
Power Dissipation
285 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FF50R12RT4: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.15 V
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
50 A
Power Dissipation
285 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FF50R12RT4: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet