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APTGLQ200HR120G
Нет в наличии
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V; 600 V
Collector-Emitter Saturation Voltage
2.05 V; 1.5 V
Configuration
Dual Common Emitter
Gate-Emitter Leakage Current
480 nA; 400 nA
Continuous Collector Current
300 A; 150 A
Power Dissipation
1 kW; 340 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGLQ200HR120G: Модуль биполярного транзистора с изолированным затвором
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