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APTGT100H120G
Нет в наличии
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Full Bridge
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
140 A
Power Dissipation
480 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT100H120G: Модуль биполярного транзистора с изолированным затвором
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