История:
T435-600B
STGIPS10C60-H
ADTC144ECAQ-7
APT43GA90BD30
ACST435-8BTR
APTGT150TL60G
APT35GA90BD15
IRG4BC30KDSTRRP
IXA90IF650NA
IXYH60N90C3
IXGH48N60B3
BYM600A170DN2
ACST610-8G
APT50GT120B2RG
A2P75S12M3
Z0107MA 5AL2
APT100GLQ65JU3
UMH3NFHATN
ACST1210-7T
APTGT300TL65G
Z0109MA 5AL2
ADTC124ECAQ-13
A1P35S12M3
A2C35S12M3
APT30GP60JDQ1
APT40GP60B2DQ2G
STGW40V60F
STGY50NC60WD
2N3054A
K2500SRP
AC0201FR-072M2L
184509
APT85GR120B2
APT75GP120JDQ3
5406000
K3601G
ACST1235-7G
T810-600B
AC0201FR-071ML
K3002G
UMH1NFHATN
K2502G
APTGLQ300H65G
K2501G
Z0109MA 2AL2
Z0109M1
055109
105534
ZXTP5401GTA
K3601GL
K2501GL
096113
K2002GRP
T830-8FP
STGWA40H65DFB
FD150R12RT4
TPDV840RG
K2000GAP
APTGT30H170T3G
Нет в наличии
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
2 V
Configuration
Full Bridge
Gate-Emitter Leakage Current
600 nA
Continuous Collector Current
45 A
Power Dissipation
210 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT30H170T3G: Модуль биполярного транзистора с изолированным затвором
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