Биполярный транзистор BCW66HQTA Diodes Incorporated

BCW66HQTA Diodes Incorporated

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Артикул:

BCW66HQTA

Производитель: Diodes Incorporated

Описание: BCW66HQTA Diodes Incorporated

Характеристики

Maximum Operating Temperature + 150 C

Manufacturer Diodes Incorporated

Package/Case SOT-23-3

Transistor Polarity NPN

Collector- Emitter Voltage VCEO Max 45 V

Collector- Base Voltage VCBO 75 V

Emitter- Base Voltage VEBO 7 V

Collector-Emitter Saturation Voltage 0.7 mV

Gain Bandwidth Product fT 100 MHz

Pd - Power Dissipation 350 mW

Minimum Operating Temperature - 55 C

Brand Diodes Incorporated

Configuration Single

Continuous Collector Current 800 mA

DC Collector/Base Gain hFE Min 250

DC Current Gain hFE Max 630

Factory Pack Quantity 3000

Maximum DC Collector Current 800 mA

Mounting Style SMD/SMT

Packaging Reel

Product Category Bipolar Transistors - BJT

Product Type BJTs - Bipolar Transistors

Qualification AEC-Q101

RoHS Details

Subcategory Transistors

Technology Si

Unit Weight 8 mg

Описание