Биполярный транзистор BFS17NQTA Diodes Incorporated

BFS17NQTA Diodes Incorporated

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Артикул:

BFS17NQTA

Производитель: Diodes Incorporated

Описание: BFS17NQTA Diodes Incorporated

Характеристики

Maximum Operating Temperature + 150 C

Manufacturer Diodes Incorporated

Package/Case SOT-23-3

Transistor Polarity NPN

Collector- Emitter Voltage VCEO Max 11 V

Collector- Base Voltage VCBO 20 V

Emitter- Base Voltage VEBO 3 V

Collector-Emitter Saturation Voltage 0.5 V

Gain Bandwidth Product fT 3.2 GHz

Pd - Power Dissipation 350 mW

Minimum Operating Temperature - 55 C

Brand Diodes Incorporated

Configuration Single

Continuous Collector Current 50 mA

DC Collector/Base Gain hFE Min 56

DC Current Gain hFE Max 180

Factory Pack Quantity 3000

Maximum DC Collector Current 50 mA

Mounting Style SMD/SMT

Packaging Reel

Product Category Bipolar Transistors - BJT

Product Type BJTs - Bipolar Transistors

Qualification AEC-Q101

RoHS Details

Series BFS17

Subcategory Transistors

Technology Si

Unit Weight 8 mg

Описание