История:
STGW39NC60VD
BK/GMW-1-2
TDB6HK240N16P
TD1120-S24
FGB40T65SPD-F085
Нет в наличии
Артикул:
Описание:
FGB40T65SPD-F085
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
267 W
Описание
Insulated-gate bipolar transistor-FGB40T65SPD-F085: Биполярный транзистор с изолированным затвором

