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FGD2736G3-F085
Нет в наличии
Артикул:
Описание:
FGD2736G3-F085
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
360 V
Collector-Emitter Saturation Voltage
1.45 V
Maximum Gate Emitter Voltage
14 V
Continuous Collector Current at 25 C
21 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-FGD2736G3-F085: Биполярный транзистор с изолированным затвором
IGBT-транзистор FGD2736G3-F085 в каталоге Components.by
