История:
044302.5DR
FS32R372SBK0MMVT
FGD5T120SH
Нет в наличии
Артикул:
Описание:
FGD5T120SH
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.9 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
10 A
Power Dispation
69 W
Описание
Insulated-gate bipolar transistor-FGD5T120SH: Биполярный транзистор с изолированным затвором

