История:
ERZ-E08A471
VK104MK151R014P050
ERZ-E05E361
FGH40N60SFDTU-F085
Нет в наличии
Артикул:
Описание:
FGH40N60SFDTU-F085
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
290 W
Описание
Insulated-gate bipolar transistor-FGH40N60SFDTU-F085: Биполярный транзистор с изолированным затвором

