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BD3/1/4-4S2
FGH40T70SHD-F155
Нет в наличии
Артикул:
Описание:
FGH40T70SHD-F155
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
700 V
Collector-Emitter Saturation Voltage
2.37 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
268 W
Описание
Insulated-gate bipolar transistor-FGH40T70SHD-F155: Биполярный транзистор с изолированным затвором
IGBT-транзистор FGH40T70SHD-F155 в каталоге Components.by

