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FS450R17OE4P
Нет в наличии
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
6-Pack
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
450 A
Power Dissipation
20 mW
Описание
Module insulated-gate bipolar transistor, IGBT-Module FS450R17OE4P: Модуль биполярного транзистора с изолированным затвором
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Купить IGBT модуль FS450R17OE4P в Минске по оптовой цене, можно в элетронном каталоге Components.by

