История:
Z0409MF0AA2
ZXTP25100BFHTA
FGAF40S65AQ
APTGT600DA60G
K0900SRP
FS225R17OE4P
IXBN75N170
FD300R06KE3
APTC60TAM24TPG
FS50R12KE3
2010056159
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K2401G
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P2400AA61TP
DF300R12KE3
FD600R17KE3_B2
IXBOD1-26R
IXBOD1-42R
3112794
FS300R12OE4
FGAF20N60SMD
FF150R12ME3G
BCR141E6327HTSA1
UMH2NTN
PDTC144EU,115
FS300R12OE4P
RM10-3D3
RM5-3H3
ACST610-8T
FS300R17KE4
STGWT20H60DF
5410200
2N3904TAR
2012622959
ACTT8B-800C0J
ACST410-8FP
FS300R17KE3
FS25R12KE3G
KAT-2
FS225R12OE4
0032.0763
ADC114EUQ-7
TFA32C09DBER
1061383
TZ-100C
Z0405NF0AA2
0032.0785
IFF600B12ME4PB11BPSA1
Нет в наличии
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.75 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
600 A
Power Dissipation
20 mW
Описание
Module insulated-gate bipolar transistor, IGBT-Module IFF600B12ME4PB11BPSA1: Модуль биполярного транзистора с изолированным затвором
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