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IGP40N65H5XKSA1
Нет в наличии
Артикул:
Описание:
IGP40N65H5XKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
74 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-IGP40N65H5XKSA1: Биполярный транзистор с изолированным затвором
IGBT-транзистор IGP40N65H5XKSA1 в каталоге Components.by

