История:
IGW20N60H3
RGT50NS65DGC9
IKB06N60T
Q4040K7TP
RM5/ILP-3C90
Q8025N5RP
RGTVX6TS65DGC11
IHW40N60R
AC0603FR-07232RL
IGW30N60H3
A2C25S12M3-F
Z0103MA0,412
Q6X8E3
BTB08-600CWRG
RGT8NS65DGC9
IGW75N60H3
RGT40NL65DGTL
RGT00TS65DGC11
Q6040J781
LSP05GI240PHX3333
QK008VH4
Q6X8E4
PLT18/10/2-3C97
ZV14K2220122NIR1HT
AC0603FR-071ML
IGW50N60H3
AC0201JR-073R3L
IGW40N60H3
IGW50N65H5
BTB06-600CWRG
Q6010LH5
IGW40N65H5
NGTB50N60SWG
ZXTP03200BGTA
LSP05GI240SX3333
A1P35S12M3-F
Q8010N5RP
Q6006N5RP
Z0109MA0,412
Q6008N4RP
APTGLQ25H120T2G
RGTV60TS65DGC11
101KD07-FTB
RGCL80TK60DGC11
RGCL60TK60GC11
Q6012LH5TP
AC0603FR-0723K7L
Q6010L555TP
Q6012LH2
RGCL80TK60GC11
AC0603FR-0723K2L
Q6006DH4RP
Q6010LH5TP
Q6010L5
L0103DE
Q6006DH3RP
ACTT12B-800CJ
Q6016LH6TP
IGW25N120H3XK
Нет в наличии
Артикул:
Описание:
IGW25N120H3XK
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.05 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
50 A
Power Dispation
326 W
Описание
Insulated-gate bipolar transistor-IGW25N120H3XK: Биполярный транзистор с изолированным затвором
IGBT-транзистор IGW25N120H3XK в каталоге Components.by

