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IHW30N110R3
Нет в наличии
Артикул:
Описание:
IHW30N110R3
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1100 V
Collector-Emitter Saturation Voltage
1.55 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
333 W
Описание
Insulated-gate bipolar transistor-IHW30N110R3: Биполярный транзистор с изолированным затвором
IGBT-транзистор IHW30N110R3 в каталоге Components.by

