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IKQ50N120CT2XKSA1
Нет в наличии
Артикул:
Описание:
IKQ50N120CT2XKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.75 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
652 W
Описание
Insulated-gate bipolar transistor-IKQ50N120CT2XKSA1: Биполярный транзистор с изолированным затвором
IGBT-транзистор IKQ50N120CT2XKSA1 в каталоге Components.by

