История:
MLS0805-4S7-121
151KH20J-FP7.5TR
AC0603FR-07158KL
AC0603FR-076K98L
AC0603FR-1022KL
AC0603FR-07422KL
AC0603FR-0716K9L
IKW25N120T2
V27RA8X2749
BCR 133S H6327
2SA1416T-TD-E
VUB160-16NOX
AUIRGSL30B60K
AC0603FR-0720K5L
DCX143ZU-7-F
SR1206JR-074R7L
A2106UA6LRP
DCX114YU-7-F
RV1206FR-07150KL
IHW40N60RFKSA1
IGZ75N65H5XKSA1
10-643729-002
NXH80T120L2Q0P2TG
RT1210BRD07150KL
E65/32/27-3C95
BCR35PNH6327XTSA1
AT32UC3A4128-C1UT
SR1206FR-7T1RL
BT138-600G0Q
AC0603FR-071K65L
2304NZG-1LF
2SA1416S-TD-E
15EDGKCM-3.5-03P
AC0603FR-0722K6L
DD500S33HE3
MLS00402-4S4-121
MLS0805-4S7-700
DG043-PV-PB-05P-MM
BT136X-600F,127
RM12/I-3C94
IKW75N65EL5XKSA1
Нет в наличии
Артикул:
Описание:
IKW75N65EL5XKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
536 W
Описание
Insulated-gate bipolar transistor-IKW75N65EL5XKSA1: Биполярный транзистор с изолированным затвором
IGBT-транзистор IKW75N65EL5XKSA1 в каталоге Components.by

