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IXGH36N60B3D1
Нет в наличии
Артикул:
Описание:
IXGH36N60B3D1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
200 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-IXGH36N60B3D1: Биполярный транзистор с изолированным затвором
IGBT-транзистор IXGH36N60B3D1 в каталоге Components.by

