История:
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IXXH80N65B4H1
Нет в наличии
Артикул:
Описание:
IXXH80N65B4H1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
160 A
Power Dispation
625 W
Описание
Insulated-gate bipolar transistor-IXXH80N65B4H1: Биполярный транзистор с изолированным затвором
IGBT-транзистор IXXH80N65B4H1 в каталоге Components.by

