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IXYH40N65C3H1
Нет в наличии
Артикул:
Описание:
IXYH40N65C3H1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
80 A
Power Dispation
300 W
Описание
Insulated-gate bipolar transistor-IXYH40N65C3H1: Биполярный транзистор с изолированным затвором
IGBT-транзистор IXYH40N65C3H1 в каталоге Components.by

