История:
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MG1750S-BN4MM
Нет в наличии
Характеристики
Manufacturer
Littelfuse
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
2 V
Configuration
Half Bridge
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
75 A
Power Dissipation
320 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module MG1750S-BN4MM: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Купить IGBT модуль MG1750S-BN4MM в Минске по оптовой цене, можно в элетронном каталоге Components.by

