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NGTB40N120IHRWG
Нет в наличии
Артикул:
Описание:
NGTB40N120IHRWG
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
80 A
Power Dispation
384 W
Описание
Insulated-gate bipolar transistor-NGTB40N120IHRWG: Биполярный транзистор с изолированным затвором
IGBT-транзистор NGTB40N120IHRWG в каталоге Components.by

