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105415
RGT30NL65DGTL
Нет в наличии
Артикул:
Описание:
RGT30NL65DGTL
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
30 A
Power Dispation
133 W
Описание
Insulated-gate bipolar transistor-RGT30NL65DGTL: Биполярный транзистор с изолированным затвором
IGBT-транзистор RGT30NL65DGTL в каталоге Components.by

