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RGW60TS65DGC11
Нет в наличии
Артикул:
Описание:
RGW60TS65DGC11
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
60 A
Power Dispation
178 W
Описание
Insulated-gate bipolar transistor-RGW60TS65DGC11: Биполярный транзистор с изолированным затвором
IGBT-транзистор RGW60TS65DGC11 в каталоге Components.by

