История:
BCR16PM-16LH-1
RJH60T04DPQ-A1#T0
RJH60T04DPQ-A1#T0
Артикул:
Описание:
RJH60T04DPQ-A1#T0
Характеристики
Manufacturer
Renesas Electronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
60 A
Power Dispation
208.3 W
Описание
Insulated-gate bipolar transistor-RJH60T04DPQ-A1#T0: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Renesas Electronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
60 A
Power Dispation
208.3 W
Описание
Insulated-gate bipolar transistor-RJH60T04DPQ-A1#T0: Биполярный транзистор с изолированным затвором

