История:
BCR16PM-16LH-1
RJH65T47DPQ-A0#T0
RJH65T47DPQ-A0#T0
Артикул:
Описание:
RJH65T47DPQ-A0#T0
Характеристики
Manufacturer
Renesas Electronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
90 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-RJH65T47DPQ-A0#T0: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Renesas Electronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
90 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-RJH65T47DPQ-A0#T0: Биполярный транзистор с изолированным затвором

