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STGWA25H120F2
Нет в наличии
Артикул:
Описание:
STGWA25H120F2
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
50 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-STGWA25H120F2: Биполярный транзистор с изолированным затвором
IGBT-транзистор STGWA25H120F2 в каталоге Components.by

