Биполярный транзистор ZTX692B Diodes Incorporated

ZTX692B Diodes Incorporated

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Артикул:

ZTX692B

Производитель: Diodes Incorporated

Описание: ZTX692B Diodes Incorporated

Характеристики

Maximum Operating Temperature + 150 C

Manufacturer Diodes Incorporated

Package/Case TO-92-3

Transistor Polarity NPN

Collector- Emitter Voltage VCEO Max 70 V

Collector- Base Voltage VCBO 70 V

Emitter- Base Voltage VEBO 5 V

Collector-Emitter Saturation Voltage 0.5 V

Gain Bandwidth Product fT 150 MHz

Pd - Power Dissipation 1 W

Minimum Operating Temperature - 55 C

Brand Diodes Incorporated

Configuration Single

Continuous Collector Current 1 A

DC Collector/Base Gain hFE Min 500 at 100 mA, 2 V, 400 at 500 mA, 2 V, 150 at 1 A, 2 V

DC Current Gain hFE Max 500 at 100 mA, 2 V

Factory Pack Quantity 4000

Height 4.01 mm

Length 4.77 mm

Maximum DC Collector Current 1 A

Mounting Style Through Hole

Packaging Bulk

Product Category Bipolar Transistors - BJT

Product Type BJTs - Bipolar Transistors

RoHS Details

Series ZTX692

Subcategory Transistors

Technology Si

Unit Weight 453,600 mg

Width 2.41 mm

Описание