Биполярный транзистор ZXT10P20DE6TA Diodes Incorporated

ZXT10P20DE6TA Diodes Incorporated

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Артикул:

ZXT10P20DE6TA

Производитель: Diodes Incorporated

Описание: ZXT10P20DE6TA Diodes Incorporated

Характеристики

Maximum Operating Temperature + 150 C

Manufacturer Diodes Incorporated

Package/Case SOT-23-6

Transistor Polarity PNP

Collector- Emitter Voltage VCEO Max - 20 V

Collector- Base Voltage VCBO - 20 V

Emitter- Base Voltage VEBO 5 V

Collector-Emitter Saturation Voltage - 240 mV

Gain Bandwidth Product fT 180 MHz

Pd - Power Dissipation 1.1 W

Minimum Operating Temperature - 55 C

Brand Diodes Incorporated

Configuration Single

Continuous Collector Current - 2.5 A

DC Collector/Base Gain hFE Min 300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 150 at 2 A, 2 V, 15 at 6 A, 2 V

DC Current Gain hFE Max 300 at 10 mA, 2 V

Factory Pack Quantity 3000

Height 1.3 mm

Length 3.1 mm

Maximum DC Collector Current 2.5 A

Mounting Style SMD/SMT

Packaging Reel

Product Category Bipolar Transistors - BJT

Product Type BJTs - Bipolar Transistors

RoHS Details

Series ZXT10

Subcategory Transistors

Technology Si

Unit Weight 6,500 mg

Width 1.8 mm

Описание