Биполярный транзистор ZXT12P12DXTA Diodes Incorporated

ZXT12P12DXTA Diodes Incorporated

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Артикул:

ZXT12P12DXTA

Производитель: Diodes Incorporated

Описание: ZXT12P12DXTA Diodes Incorporated

Характеристики

Maximum Operating Temperature + 150 C

Manufacturer Diodes Incorporated

Package/Case MSOP-8

Transistor Polarity PNP

Collector- Emitter Voltage VCEO Max - 12 V

Collector- Base Voltage VCBO - 20 V

Emitter- Base Voltage VEBO 7.5 V

Collector-Emitter Saturation Voltage - 150 mV

Gain Bandwidth Product fT 85 MHz

Pd - Power Dissipation 870 mW

Minimum Operating Temperature - 55 C

Brand Diodes Incorporated

Configuration Dual

Continuous Collector Current - 3 A

DC Collector/Base Gain hFE Min 300 at 10 mA, 2 V, 300 at 1 A, 2 V, 200 at 3 A, 2 V, 20 at 12 A, 2 V

DC Current Gain hFE Max 300 at 10 mA, 2 V

Factory Pack Quantity 1000

Height 0.95 mm

Length 3.1 mm

Maximum DC Collector Current 3 A

Mounting Style SMD/SMT

Packaging Reel

Product Category Bipolar Transistors - BJT

Product Type BJTs - Bipolar Transistors

RoHS Details

Series ZXT12

Subcategory Transistors

Technology Si

Unit Weight 140 mg

Width 3.1 mm

Описание