Биполярный транзистор ZXTN07012EFFTA Diodes Incorporated

ZXTN07012EFFTA Diodes Incorporated

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Артикул:

ZXTN07012EFFTA

Производитель: Diodes Incorporated

Описание: ZXTN07012EFFTA Diodes Incorporated

Характеристики

Maximum Operating Temperature + 150 C

Manufacturer Diodes Incorporated

Package/Case SOT-23F-3

Transistor Polarity NPN

Collector- Emitter Voltage VCEO Max 12 V

Collector- Base Voltage VCBO 20 V

Emitter- Base Voltage VEBO 7 V

Gain Bandwidth Product fT 220 MHz

Pd - Power Dissipation 2000 mW

Minimum Operating Temperature - 55 C

Brand Diodes Incorporated

Configuration Single

DC Collector/Base Gain hFE Min 500 at 100 mA, 2 V, 400 at 2 A, 2 V, 330 at 4.5 A, 2 V, 140 at 10 A, 2 V

DC Current Gain hFE Max 500

Factory Pack Quantity 3000

Height 1 mm

Length 3 mm

Maximum DC Collector Current 4.5 A

Mounting Style SMD/SMT

Packaging Reel

Product Category Bipolar Transistors - BJT

Product Type BJTs - Bipolar Transistors

RoHS Details

Series ZXTN07012

Subcategory Transistors

Technology Si

Unit Weight 36 g

Width 1.7 mm

Описание