Биполярный транзистор ZXTN19100CZTA Diodes Incorporated

ZXTN19100CZTA Diodes Incorporated

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Артикул:

ZXTN19100CZTA

Производитель: Diodes Incorporated

Описание: ZXTN19100CZTA Diodes Incorporated

Характеристики

Maximum Operating Temperature + 150 C

Manufacturer Diodes Incorporated

Package/Case SOT-89-3

Transistor Polarity NPN

Collector- Emitter Voltage VCEO Max 100 V

Collector- Base Voltage VCBO 200 V

Emitter- Base Voltage VEBO 7 V

Collector-Emitter Saturation Voltage 65 mV

Gain Bandwidth Product fT 150 MHz

Pd - Power Dissipation 4460 mW

Minimum Operating Temperature - 55 C

Brand Diodes Incorporated

Configuration Single

Continuous Collector Current 5.25 A

DC Collector/Base Gain hFE Min 30 at 5.25 A, 2 V

DC Current Gain hFE Max 500 at 100 mA, 2 V

Factory Pack Quantity 1000

Height 1.6 mm

Length 4.6 mm

Maximum DC Collector Current 5.25 A

Mounting Style SMD/SMT

Packaging Reel

Product Category Bipolar Transistors - BJT

Product Type BJTs - Bipolar Transistors

RoHS Details

Series ZXTN19100

Subcategory Transistors

Technology Si

Unit Weight 52 mg

Width 2.6 mm

Описание