Биполярный транзистор ZXTN2005GTA Diodes Incorporated

ZXTN2005GTA Diodes Incorporated

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Артикул:

ZXTN2005GTA

Производитель: Diodes Incorporated

Описание: ZXTN2005GTA Diodes Incorporated

Характеристики

Maximum Operating Temperature + 150 C

Manufacturer Diodes Incorporated

Package/Case SOT-223-4

Transistor Polarity NPN

Collector- Emitter Voltage VCEO Max 25 V

Collector- Base Voltage VCBO 60 V

Emitter- Base Voltage VEBO 7 V

Gain Bandwidth Product fT 150 MHz

Pd - Power Dissipation 3 W

Minimum Operating Temperature - 55 C

Brand Diodes Incorporated

Configuration Single

Continuous Collector Current 7 A

DC Collector/Base Gain hFE Min 300 at 10 mA, 1 V, 300 at 1 A, 1 V, 200 at 7 A, 1 V, 40 at 20 A, 1 V

DC Current Gain hFE Max 300

Factory Pack Quantity 1000

Height 1.65 mm

Length 6.7 mm

Maximum DC Collector Current 7 A

Mounting Style SMD/SMT

Packaging Reel

Product Category Bipolar Transistors - BJT

Product Type BJTs - Bipolar Transistors

RoHS Details

Series ZXTN2005

Subcategory Transistors

Technology Si

Unit Weight 112 mg

Width 3.7 mm

Описание