Биполярный транзистор ZXTN25012EFHTA Diodes Incorporated

ZXTN25012EFHTA Diodes Incorporated

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Артикул:

ZXTN25012EFHTA

Производитель: Diodes Incorporated

Описание: ZXTN25012EFHTA Diodes Incorporated

Характеристики

Maximum Operating Temperature + 150 C

Manufacturer Diodes Incorporated

Package/Case SOT-23-3

Transistor Polarity NPN

Collector- Emitter Voltage VCEO Max 12 V

Collector- Base Voltage VCBO 20 V

Emitter- Base Voltage VEBO 7 V

Gain Bandwidth Product fT 260 MHz

Pd - Power Dissipation 1.25 W

Minimum Operating Temperature - 55 C

Brand Diodes Incorporated

Configuration Single

Continuous Collector Current 6 A

DC Collector/Base Gain hFE Min 500

DC Current Gain hFE Max 500 at 10 mA, 2 V

Factory Pack Quantity 3000

Height 1 mm

Length 3.05 mm

Maximum DC Collector Current 15 A

Mounting Style SMD/SMT

Packaging Reel

Product Category Bipolar Transistors - BJT

Product Type BJTs - Bipolar Transistors

RoHS Details

Series ZXTN250

Subcategory Transistors

Technology Si

Unit Weight 8 mg

Width 1.4 mm

Описание