Биполярный транзистор ZXTN25100DFHTA Diodes Incorporated

ZXTN25100DFHTA Diodes Incorporated

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Артикул:

ZXTN25100DFHTA

Производитель: Diodes Incorporated

Описание: ZXTN25100DFHTA Diodes Incorporated

Характеристики

Maximum Operating Temperature + 150 C

Manufacturer Diodes Incorporated

Package/Case SOT-23-3

Transistor Polarity NPN

Collector- Emitter Voltage VCEO Max 100 V

Collector- Base Voltage VCBO 180 V

Emitter- Base Voltage VEBO 7 V

Gain Bandwidth Product fT 175 MHz

Pd - Power Dissipation 1810 mW

Minimum Operating Temperature - 55 C

Brand Diodes Incorporated

Configuration Single

DC Collector/Base Gain hFE Min 120

DC Current Gain hFE Max 300 at 10 mA, 2 V

Factory Pack Quantity 3000

Height 1 mm

Length 3.05 mm

Maximum DC Collector Current 2.5 A

Mounting Style SMD/SMT

Packaging Reel

Product Category Bipolar Transistors - BJT

Product Type BJTs - Bipolar Transistors

RoHS Details

Series ZXTN25100

Subcategory Transistors

Technology Si

Unit Weight 8 mg

Width 1.4 mm

Описание