Биполярный транзистор ZXTN25100DZTA Diodes Incorporated

ZXTN25100DZTA Diodes Incorporated

Изображение служит только для ознакомления.
См. спецификацию продукта.

Нет в наличии

Артикул:

ZXTN25100DZTA

Производитель: Diodes Incorporated

Описание: ZXTN25100DZTA Diodes Incorporated

Характеристики

Maximum Operating Temperature + 150 C

Manufacturer Diodes Incorporated

Package/Case SOT-89-3

Transistor Polarity NPN

Collector- Emitter Voltage VCEO Max 100 V

Collector- Base Voltage VCBO 180 V

Emitter- Base Voltage VEBO 7 V

Gain Bandwidth Product fT 175 MHz

Pd - Power Dissipation 4460 mW

Minimum Operating Temperature - 55 C

Brand Diodes Incorporated

Configuration Single

DC Collector/Base Gain hFE Min 120

DC Current Gain hFE Max 300

Factory Pack Quantity 1000

Height 1.6 mm

Length 4.6 mm

Maximum DC Collector Current 2.5 A

Mounting Style SMD/SMT

Packaging Reel

Product Category Bipolar Transistors - BJT

Product Type BJTs - Bipolar Transistors

RoHS Details

Series ZXTN25100

Subcategory Transistors

Technology Si

Unit Weight 52 mg

Width 2.6 mm

Описание