Биполярный транзистор ZXTN5551ZTA Diodes Incorporated

ZXTN5551ZTA Diodes Incorporated

Изображение служит только для ознакомления.
См. спецификацию продукта.

Нет в наличии

Артикул:

ZXTN5551ZTA

Производитель: Diodes Incorporated

Описание: ZXTN5551ZTA Diodes Incorporated

Характеристики

Maximum Operating Temperature + 150 C

Manufacturer Diodes Incorporated

Package/Case SOT-89-3

Transistor Polarity NPN

Collector- Emitter Voltage VCEO Max 160 V

Collector- Base Voltage VCBO 180 V

Emitter- Base Voltage VEBO 6 V

Gain Bandwidth Product fT 130 MHz

Pd - Power Dissipation 1200 mW

Minimum Operating Temperature - 55 C

Brand Diodes Incorporated

Configuration Single

DC Collector/Base Gain hFE Min 80 at 1 mA, 5 V, 80 at 10 mA, 5 V, 30 at 50 mA, 5 V

DC Current Gain hFE Max 80 at 1 mA, 5 V

Factory Pack Quantity 1000

Height 1.6 mm

Length 4.6 mm

Maximum DC Collector Current 0.6 A

Mounting Style SMD/SMT

Packaging Reel

Product Category Bipolar Transistors - BJT

Product Type BJTs - Bipolar Transistors

RoHS Details

Series ZXTN555

Subcategory Transistors

Technology Si

Unit Weight 52 mg

Width 2.6 mm

Описание