Биполярный транзистор ZXTP01500BGQTC Diodes Incorporated

ZXTP01500BGQTC Diodes Incorporated

Изображение служит только для ознакомления.
См. спецификацию продукта.

Нет в наличии

Артикул:

ZXTP01500BGQTC

Производитель: Diodes Incorporated

Описание: ZXTP01500BGQTC Diodes Incorporated

Характеристики

Maximum Operating Temperature + 150 C

Manufacturer Diodes Incorporated

Package/Case SOT-223-3

Transistor Polarity PNP

Collector- Emitter Voltage VCEO Max - 500 V

Collector- Base Voltage VCBO - 500 V

Emitter- Base Voltage VEBO - 7 V

Collector-Emitter Saturation Voltage - 500 mV

Gain Bandwidth Product fT 60 MHz

Pd - Power Dissipation 3 W

Minimum Operating Temperature - 55 C

Brand Diodes Incorporated

Configuration Single

Continuous Collector Current - 150 mA

DC Collector/Base Gain hFE Min 80

DC Current Gain hFE Max 300

Factory Pack Quantity 4000

Maximum DC Collector Current - 500 mA

Mounting Style SMD/SMT

Packaging Reel

Product Category Bipolar Transistors - BJT

Product Type BJTs - Bipolar Transistors

Qualification AEC-Q101

RoHS Details

Series ZXTP01500B

Subcategory Transistors

Technology Si

Unit Weight 112 mg

Описание