Биполярный транзистор ZXTP19100CGTA Diodes Incorporated

ZXTP19100CGTA Diodes Incorporated

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Артикул:

ZXTP19100CGTA

Производитель: Diodes Incorporated

Описание: ZXTP19100CGTA Diodes Incorporated

Характеристики

Maximum Operating Temperature + 150 C

Manufacturer Diodes Incorporated

Package/Case SOT-223-4

Transistor Polarity PNP

Collector- Emitter Voltage VCEO Max - 100 V

Collector- Base Voltage VCBO - 110 V

Emitter- Base Voltage VEBO - 7 V

Collector-Emitter Saturation Voltage - 130 mV

Gain Bandwidth Product fT 142 MHz

Pd - Power Dissipation 5300 mW

Minimum Operating Temperature - 55 C

Brand Diodes Incorporated

Configuration Single

Continuous Collector Current - 2 A

DC Collector/Base Gain hFE Min 20 at - 2 A, - 2 V

DC Current Gain hFE Max 500 at - 100 mA, -2 V

Factory Pack Quantity 1000

Height 1.65 mm

Length 6.7 mm

Maximum DC Collector Current - 2 A

Mounting Style SMD/SMT

Packaging Reel

Product Category Bipolar Transistors - BJT

Product Type BJTs - Bipolar Transistors

RoHS Details

Series ZXTP191

Subcategory Transistors

Technology Si

Unit Weight 112 mg

Width 3.7 mm

Описание