История:
DDTA123ECA-7-F
TD160N16SOFHPSA1
V82RA8X2749
AC0603JR-073M6L
AC0603JR-0739KL
BTA08-800CW3LFG
241KD05-FTR
RV1206JR-075M6L
MCP6564A-E/ML
AC0805FR-0710KL
AC0603FR-0732K4L
V5.5MLA0805LNA
RV1206JR-071M5L
AC0603FR-074K53L
AC0603JR-073K6L
FGH40N60SMD-F085
AC0603JR-07300RL
AC0603FR-073K74L
AC0603FR-0756K2L
AC0603FR-0748R7L
AC0603FR-0786R6L
AC0805FR-07102KL
2SA1419T-TD-H
RV1206FR-071M4L
AC0603FR-07536KL
AC0603FR-0778K7L
ZXTN25060BFHTA
ROD10/200-3C90
SR0805JR-072K2L
ZXTN25012EFLTA
DDTA144EE-7-F
AC0603FR-0716KL
MLH0805-2N7-03
AC0603FR-07300RL
V8RA8X2749
AC0603FR-0734K8L
E38/8/25-3C97
ADTA143ZUAQ-7
IKD04N60RA
AIKW50N65DF5XKSA1
PLT14/5/1.5-3F46
T1050H-6I
AC0603FR-072K61L
FZ2400R12HP4_B9
PLT14/5/1.5-4F1
AC0603FR-0760R4L
TDB6HK240N16P
KWant250-1C05SGP
K2400EH70
BCR 198 E6327
APT30GT60BRG
QK006NH4RP
Биполярный транзистор - BJT
| Товар | Цена | Maximum Operating Temperature | Manufacturer | Package/Case | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Gain Bandwidth Product fT | Pd - Power Dissipation | Minimum Operating Temperature | Brand | Configuration | Continuous Collector Current | DC Collector/Base Gain hFE Min | DC Current Gain hFE Max | Factory Pack Quantity | Height | Length | Maximum DC Collector Current | Mounting Style | Packaging | Product Category | Product Type | Qualification | RoHS | Series | Subcategory | Technology | Unit Weight | Width | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | 100 V | 120 V | - 5 V | 140 MHz | 1 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | 100 V | 120 V | - 5 V | 140 MHz | 1 W | - 55 C | Diodes Incorporated | Single | - 2 A | 4000 | 4.01 mm | 4.77 mm | 2 A | Through Hole | Bulk | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX753 | Transistors | Si | 453,600 mg | 2.41 mm | |||||
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поиск предложений
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Diodes Incorporated | Diodes Incorporated | 4000 | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Transistors | ||||||||||||||||||||||||||
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поиск предложений
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+ 200 C | Diodes Incorporated | TO-92-3 | PNP | - 100 V | - 120 V | - 5 V | - 300 mV | 140 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 200 C | Diodes Incorporated | TO-92-3 | PNP | - 100 V | - 120 V | - 5 V | - 300 mV | 140 MHz | 1 W | - 55 C | Diodes Incorporated | Single | - 2 A | 2000 | 4.01 mm | 4.77 mm | - 2 A | Through Hole | Ammo Pack | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX753 | Transistors | Si | 453,600 mg | 2.41 mm | ||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 300 V | - 300 V | - 5 V | - 0.5 V | 30 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 300 V | - 300 V | - 5 V | - 0.5 V | 30 MHz | 1 W | - 55 C | Diodes Incorporated | Single | - 0.5 A | 50 at 100 mA, 5 V, 40 at 10 mA, 5 V | 50 at 100 mA, 5 V | 4000 | 4.01 mm | 4.77 mm | 0.5 A | Through Hole | Bulk | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX757 | Transistors | Si | 453,600 mg | 2.41 mm | ||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 300 V | - 300 V | - 5 V | 30 MHz | 1 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 400 V | - 400 V | - 5 V | - 0.5 V | 50 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 400 V | - 400 V | - 5 V | - 0.5 V | 50 MHz | 1 W | - 55 C | Diodes Incorporated | Single | - 0.5 A | 50 at 1 mA, 5 V, 50 at 100 mA, 5 V, 40 at 200 mA, 10 V | 50 at 1 mA, 5 V | 4000 | 4.01 mm | 4.77 mm | 0.5 A | Through Hole | Bulk | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX758 | Transistors | Si | 453,600 mg | 2.41 mm | ||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 400 V | - 400 V | - 5 V | - 0.5 V | 50 MHz | 1 W | - 55 C | Diodes Incorporated | Single | - 0.5 A | 50 at 1 mA, 5 V, 50 at 100 mA, 5 V, 40 at 200 mA, 10 V | 50 at 1 mA, 5 V | 2000 | 4.01 mm | 4.77 mm | 0.5 A | Through Hole | Ammo Pack | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX758 | Transistors | Si | 453,600 mg | 2.41 mm | ||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 15 V | - 20 V | - 5 V | - 0.5 V | 150 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | - 3 A | 300 at 10 mA, 1 V, 250 at 1 A, 1 V, 200 at 2 A, 1 V, 80 at 10 A, 2 V | 300 at 10 mA, 1 V | 4000 | 4.01 mm | 4.77 mm | 3 A | Through Hole | Bulk | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX788 | Transistors | Si | 453,600 mg | 2.41 mm | ||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 15 V | - 20 V | - 5 V | - 0.5 V | 150 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | - 3 A | 300 at 10 mA, 1 V, 250 at 1 A, 1 V, 200 at 2 A, 1 V, 80 at 10 A, 2 V | 300 at 10 mA, 1 V | 2000 | 4.01 mm | 4.77 mm | 3 A | Through Hole | Ammo Pack | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX788 | Transistors | Si | 453,600 mg | 2.41 mm | ||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 15 V | - 15 V | - 5 V | - 0.5 V | 100 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | 15 V | 15 V | 5 V | 100 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | 500 at 10 mA, 2 V, 400 at 1 A, 2 V, 300 at 2 A, 2 V, 150 at 6 A, 2 V | 500 at 10 mA, 2 V | 2000 | 4.01 mm | 4.77 mm | 3 A | Through Hole | Ammo Pack | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX788 | Transistors | Si | 2.41 mm | |||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 25 V | - 25 V | - 5 V | - 0.5 V | 100 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 25 V | - 25 V | - 5 V | - 0.5 V | 100 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | - 3 A | 300 at 10 mA, 2 V | 2000 | 4.01 mm | 4.77 mm | 3 A | Through Hole | Ammo Pack | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX789 | Transistors | Si | 453,600 mg | 2.41 mm | |||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 40 V | - 50 V | - 5 V | - 0.75 V | 100 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 40 V | - 50 V | - 5 V | - 0.75 V | 100 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | - 2 A | 300 at 10 mA, 2 V, 250 at 500 mA, 2 V, 200 at 1 A, 2 V, 150 at 2 A, 2 V | 300 at 10 mA, 2 V | 4000 | 4.01 mm | 4.77 mm | 2 A | Through Hole | Bulk | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX790 | Transistors | Si | 453,600 mg | 2.41 mm | ||
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поиск предложений
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 70 V | - 75 V | - 5 V | - 0.5 V | 100 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 70 V | - 75 V | - 5 V | - 0.5 V | 100 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 140 V | - 140 V | - 5 V | - 0.3 V | 100 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 140 V | - 140 V | - 5 V | - 0.3 V | 100 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | - 0.5 A | 4000 | 4.01 mm | 4.77 mm | 0.5 A | Through Hole | Bulk | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX795 | Transistors | Si | 453,600 mg | 2.41 mm | ||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 140 V | - 140 V | - 5 V | - 0.3 V | 100 MHz | 1 W | - 55 C |
