Bipolar Transistors - BJT
| Товар | Цена | Maximum Operating Temperature | Manufacturer | Package/Case | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Gain Bandwidth Product fT | Pd - Power Dissipation | Minimum Operating Temperature | Brand | Configuration | Continuous Collector Current | DC Collector/Base Gain hFE Min | DC Current Gain hFE Max | Factory Pack Quantity | Height | Length | Maximum DC Collector Current | Mounting Style | Packaging | Product Category | Product Type | Qualification | RoHS | Series | Subcategory | Technology | Unit Weight | Width | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
поиск предложений
|
||||||||||||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | DFN2020B-3 | NPN | 20 V | 7.5 V | 140 MHz | 3 W | - 55 C | |||||||||||||||||||||||
|
|
поиск предложений
|
||||||||||||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | DFN2020B-3 | NPN | 50 V | 7.5 V | 165 MHz | 1.5 W | - 55 C | |||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | DFN2020B-3 | NPN | 80 V | 7.5 V | 160 MHz | 1.5 W | - 55 C | |||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | DFN2020B-3 | NPN | 80 V | 7.5 V | 160 MHz | 1.5 W | - 55 C | Diodes Incorporated | Single | 3.5 A | 3000 | 5 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXTN620 | Transistors | Si | 30 g | |||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23-3 | NPN | 25 V | 35 V | 7 V | 200 mV | 725 mW | - 55 C | ||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | DFN3020B-8 | NPN | 20 V | 40 V | 7 V | 8 mV | 140 MHz | 1.2 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-223-3 | PNP | - 500 V | - 500 V | - 7 V | - 500 mV | 60 MHz | 3 W | - 55 C | Diodes Incorporated | Single | - 150 mA | 80 | 300 | 4000 | - 500 mA | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | AEC-Q101 | Details | ZXTP01500B | Transistors | Si | 112 mg | ||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | - 200 V | - 220 V | - 7 V | - 37 mV | 105 MHz | 11.9 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-89-3 | PNP | 200 V | 220 V | 7 V | 260 mV | 105 MHz | 1.1 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23F-3 | PNP | 40 V | 50 V | 7 V | 200 MHz | 2 W | - 55 C | ||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23F-3 | PNP | - 20 V | - 25 V | - 7 V | 40 mV | 200 MHz | 2 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | 20 V | 25 V | 7 V | 275 mV | 176 MHz | 5.3 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-89-3 | PNP | 20 V | 25 V | 7 V | 176 MHz | 4.46 W | - 55 C | ||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23F-3 | PNP | - 60 V | - 60 V | - 7 V | 75 mV | 180 MHz | 2 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | 60 V | 60 V | 7 V | 180 MHz | 5.3 W | - 55 C | ||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-89-3 | PNP | 60 V | 60 V | 7 V | 180 MHz | 4.46 W | - 55 C | ||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23F-3 | PNP | 100 V | 110 V | 7 V | 142 MHz | 2 W | - 55 C | ||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | - 100 V | - 110 V | - 7 V | - 130 mV | 142 MHz | 5300 mW | - 55 C | Diodes Incorporated | Single | - 2 A | 20 at - 2 A, - 2 V | 500 at - 100 mA, -2 V | 1000 | 1.65 mm | 6.7 mm | - 2 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXTP191 | Transistors | Si | 112 mg | 3.7 mm | ||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-89-3 | PNP | - 100 V | - 110 V | - 7 V | - 220 mV | 142 MHz | 4.46 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | 30 V | - 50 V | 7 V | 110 MHz | 3 W | - 55 C | ||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-89-3 | PNP | 30 V | - 30 V | 7 V | 110 MHz | 2.1 W | - 55 C | ||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-89-3 | PNP | 40 V | - 50 V | 7.5 V | 152 MHz | 3 W | - 55 C | ||||||||||||||||||||||
|
|
поиск предложений
|
