Bipolar Transistors - BJT
| Товар | Цена | Maximum Operating Temperature | Manufacturer | Package/Case | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Gain Bandwidth Product fT | Pd - Power Dissipation | Minimum Operating Temperature | Brand | Configuration | Continuous Collector Current | DC Collector/Base Gain hFE Min | DC Current Gain hFE Max | Factory Pack Quantity | Height | Length | Maximum DC Collector Current | Mounting Style | Packaging | Product Category | Product Type | Qualification | RoHS | Series | Subcategory | Technology | Unit Weight | Width | |
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-3 | NPN | 50 V | 150 V | 7 V | 200 MHz | 1.25 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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поиск предложений
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Diodes Incorporated | |||||||||||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 60 V | 150 V | 7 V | 185 MHz | 4.46 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 60 V | 150 V | 7 V | 185 MHz | 4460 mW | - 55 C | Diodes Incorporated | Single | 1000 | 1.6 mm | 4.6 mm | 5 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXTN25060 | Transistors | Si | 52 mg | 2.6 mm | ||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-3 | NPN | 100 V | 170 V | 7 V | 160 MHz | 1.81 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-3 | NPN | 100 V | 180 V | 7 V | 175 MHz | 1.81 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-3 | NPN | 100 V | 180 V | 7 V | 175 MHz | 1810 mW | - 55 C | Diodes Incorporated | Single | 120 | 300 at 10 mA, 2 V | 3000 | 1 mm | 3.05 mm | 2.5 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXTN25100 | Transistors | Si | 8 mg | 1.4 mm | ||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | NPN | 100 V | 180 V | 7 V | 120 mV | 175 MHz | 1.2 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | NPN | 100 V | 180 V | 7 V | 175 MHz | 5.3 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 100 V | 180 V | 7 V | 175 MHz | 4.46 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 100 V | 180 V | 7 V | 175 MHz | 4460 mW | - 55 C | Diodes Incorporated | Single | 120 | 300 | 1000 | 1.6 mm | 4.6 mm | 2.5 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXTN25100 | Transistors | Si | 52 mg | 2.6 mm | ||||
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поиск предложений
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+ 150 C | Diodes Incorporated | DFN1411-3 | NPN | 20 V | 20 V | 7 V | 290 mV | 260 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | DFN1411-3 | NPN | 20 V | 20 V | 7 V | 290 mV | 260 MHz | 1 W | - 55 C | Diodes Incorporated | Single | 300 at 100 mA, 2 V | 1000 at 100 mA, 2 V | 3000 | 4 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXTN260 | Transistors | Si | 9 g | ||||||
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поиск предложений
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Diodes Incorporated | NPN | Diodes Incorporated | 3000 | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXTN26 | Transistors | Si | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 100 V | 7 V | Diodes Incorporated | Single | 60 | 1000 | 1 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXTN400 | Transistors | Si | 52 mg | ||||||||||||
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поиск предложений
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Diodes Incorporated | |||||||||||||||||||||||||||||||
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поиск предложений
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Diodes Incorporated | Diodes Incorporated | 2500 | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | AEC-Q101 | Details | ZXTN4 | Transistors | Si | 850 g | ||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-252-3 | NPN | 150 V | 150 V | 7 V | 3.8 W | - 55 C | |||||||||||||||||||||||
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поиск предложений
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Diodes Incorporated | SOT-89-3 | Diodes Incorporated | 1000 | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | AEC-Q101 | Details | ZXTN4004 | Transistors | Si | 52 mg | |||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 200 V | 200 V | 7 V | 1.5 W | - 55 C | |||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 200 V | 200 V | 7 V | 1.5 W | - 55 C | Diodes Incorporated | Single | 1 A | 60 at 85 mA, 250 mV | 100 at 150 mA, 320 mV | 1000 | 0.5 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXTN4006 | Transistors | Si | 52 mg | |||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-3 | NPN | 40 V | 40 V | 5 V | 320 mV | 100 MHz | 730 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-3 | NPN | 160 V | 180 V | 6 V | 130 MHz | 330 mW | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 160 V | 180 V | 6 V | 130 MHz | 1200 mW | - 55 C | Diodes Incorporated | Single | 80 at 1 mA, 5 V, 80 at 10 mA, 5 V, 30 at 50 mA, 5 V | 80 at 1 mA, 5 V | 1000 | 1.6 mm | 4.6 mm | 0.6 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXTN555 | Transistors | Si | 52 mg | 2.6 mm |
