История:
STGW40H65DFB-4
Bipolar Transistors - BJT
| Товар | Цена | Maximum Operating Temperature | Manufacturer | Package/Case | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Gain Bandwidth Product fT | Pd - Power Dissipation | Minimum Operating Temperature | Brand | Configuration | Continuous Collector Current | DC Collector/Base Gain hFE Min | DC Current Gain hFE Max | Factory Pack Quantity | Height | Length | Maximum DC Collector Current | Mounting Style | Packaging | Product Category | Product Type | Qualification | RoHS | Series | Subcategory | Technology | Unit Weight | Width | |
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поиск предложений
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+ 150 C | Diodes Incorporated | DFN3020B-8 | PNP | - 40 V | - 50 V | - 7 V | - 25 mV | 190 MHz | 1.5 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23F-3 | NPN | 12 V | 20 V | 7 V | 220 MHz | 2 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23F-3 | NPN | 12 V | 20 V | 7 V | 220 MHz | 2000 mW | - 55 C | Diodes Incorporated | Single | 500 at 100 mA, 2 V, 400 at 2 A, 2 V, 330 at 4.5 A, 2 V, 140 at 10 A, 2 V | 500 | 3000 | 1 mm | 3 mm | 4.5 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXTN07012 | Transistors | Si | 36 g | 1.7 mm | ||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23F-3 | NPN | 45 V | 45 V | 7 V | 190 MHz | 2 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23F-3 | NPN | 45 V | 45 V | 7 V | 190 MHz | 2000 mW | - 55 C | Diodes Incorporated | Single | 500 at 100 mA, 2 V, 400 at 1 A, 2 V, 250 at 2 A, 2 V, 70 at 4 A, 2 V | 500 | 3000 | 1 mm | 3 mm | 4 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXTN07045 | Transistors | Si | 36 g | 1.7 mm | ||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23F-3 | NPN | 400 V | 450 V | 7 V | 40 MHz | 2 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | PowerDI3333-8 | NPN | 400 V | 450 V | 7 V | 125 mV | 40 MHz | 0.83 W | - 55 C | Diodes Incorporated | Single | 0.5 A | 100 at 50 mA, 5 V | 300 at 50 mA, 5 V | 2000 | 1 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Transistors | Si | 30 mg | |||||||
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поиск предложений
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Diodes Incorporated | |||||||||||||||||||||||||||||||
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поиск предложений
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Diodes Incorporated | SOT-89-3 | Diodes Incorporated | 1000 | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXTN10 | Transistors | Si | 52 mg | ||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23F-3 | NPN | 20 V | 65 V | 7 V | 30 mV | 150 MHz | 2 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23F-3 | NPN | 20 V | 70 V | 7 V | 190 mV | 160 MHz | 2 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | NPN | 20 V | 70 V | 7 V | 160 MHz | 5.3 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 20 V | 70 V | 7 V | 160 MHz | 4.46 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23F-3 | NPN | 60 V | 160 V | 7 V | 130 MHz | 2 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23F-3 | NPN | 60 V | 160 V | 7 V | 130 MHz | 2000 mW | - 55 C | Diodes Incorporated | Single | 200 at 100 mA, 2 V, 160 at 2 A, 2 V, 30 at 6 A, 2 V | 200 | 3000 | 1 mm | 3 mm | 5.5 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXTN190 | Transistors | Si | 36 mg | 1.7 mm | ||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | NPN | 60 V | 160 V | 7 V | 50 mV | 130 MHz | 5.3 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | NPN | 60 V | 160 V | 7 V | 50 mV | 130 MHz | 5300 mW | - 55 C | Diodes Incorporated | Single | 7 A | 25 at 7 A, 2 V | 500 at 100 mA, 2 V | 1000 | 1.65 mm | 6.7 mm | 7 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXTN19060 | Transistors | Si | 112 mg | 3.7 mm | ||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23F-3 | NPN | 100 V | 200 V | 7 V | 60 mV | 150 MHz | 16 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | NPN | 100 V | 200 V | 7 V | 150 MHz | 5.3 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 100 V | 200 V | 7 V | 65 mV | 150 MHz | 4.46 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 100 V | 200 V | 7 V | 65 mV | 150 MHz | 4460 mW | - 55 C | Diodes Incorporated | Single | 5.25 A | 30 at 5.25 A, 2 V | 500 at 100 mA, 2 V | 1000 | 1.6 mm | 4.6 mm | 5.25 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXTN19100 | Transistors | Si | 52 mg | 2.6 mm | ||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | NPN | 25 V | 60 V | 7 V | 150 MHz | 3 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | NPN | 25 V | 60 V | 7 V | 150 MHz | 3 W | - 55 C | Diodes Incorporated | Single | 7 A | 300 at 10 mA, 1 V, 300 at 1 A, 1 V, 200 at 7 A, 1 V, 40 at 20 A, 1 V | 300 | 1000 | 1.65 mm | 6.7 mm | 7 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXTN2005 | Transistors | Si | 112 mg | 3.7 mm | |||
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поиск предложений
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | NPN | 30 V | 80 V | 7 V | 140 MHz | 3 W | - 55 C |
