Bipolar Transistors - BJT
| Товар | Цена | Maximum Operating Temperature | Manufacturer | Package/Case | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Gain Bandwidth Product fT | Pd - Power Dissipation | Minimum Operating Temperature | Brand | Configuration | Continuous Collector Current | DC Collector/Base Gain hFE Min | DC Current Gain hFE Max | Factory Pack Quantity | Height | Length | Maximum DC Collector Current | Mounting Style | Packaging | Product Category | Product Type | Qualification | RoHS | Series | Subcategory | Technology | Unit Weight | Width | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | 60 V | - 100 V | - 7 V | 120 MHz | 3 W | - 55 C | ||||||||||||||||||||||
|
|
поиск предложений
|
Diodes Incorporated | Diodes Incorporated | 1000 | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Transistors | |||||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | 140 V | - 180 V | - 7 V | 120 MHz | 3 W | - 55 C | ||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | 140 V | 180 V | 7 V | 120 MHz | 3000 mW | - 55 C | Diodes Incorporated | Single | 100 | 4000 | 1.7 mm | 6.7 mm | 4 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZX5T955 | Transistors | Si | 112 mg | 3.7 mm | |||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | DPAK-3 | NPN | 75 V | 150 V | 7 V | 140 MHz | 4400 mW | - 55 C | ||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23-6 | NPN | 15 V | 15 V | 5 V | 230 mV | 120 MHz | 1.1 W | - 55 C | Diodes Incorporated | Single | 4 A | 200 at 10 mA, 2 V, 300 at 200 mA, 2 V, 200 at 3 A, 2 V, 150 at 5 A, 2 V | 200 at 10 mA, 2 V | 3000 | 1.3 mm | 3.1 mm | 4 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXT10 | Transistors | Si | 6,500 mg | 1.8 mm | ||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23-6 | NPN | 20 V | 20 V | 5 V | 190 mV | 140 MHz | 1.1 W | - 55 C | Diodes Incorporated | Single | 3.5 A | 3000 | 1.3 mm | 3.1 mm | 3.5 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXT10 | Transistors | Si | 6,500 mg | 1.8 mm | ||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23-6 | NPN | 50 V | 50 V | 5 V | 225 mV | 165 MHz | 1.1 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23-6 | NPN | 50 V | 50 V | 5 V | 225 mV | 165 MHz | 1.1 W | - 55 C | Diodes Incorporated | Single | 3 A | 3000 | 1.3 mm | 3.1 mm | 3 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXT10N50 | Transistors | Si | 6,500 mg | 1.8 mm | ||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23-6 | PNP | - 20 V | - 20 V | 5 V | - 240 mV | 180 MHz | 1.1 W | - 55 C | Diodes Incorporated | Single | - 2.5 A | 300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 150 at 2 A, 2 V, 15 at 6 A, 2 V | 300 at 10 mA, 2 V | 3000 | 1.3 mm | 3.1 mm | 2.5 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXT10 | Transistors | Si | 6,500 mg | 1.8 mm | ||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23-6 | PNP | - 40 V | - 40 V | 5 V | - 210 mV | 190 MHz | 1.1 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23-6 | PNP | - 40 V | - 40 V | 5 V | - 210 mV | 190 MHz | 1.1 W | - 55 C | Diodes Incorporated | Single | - 2 A | 300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 180 at 1 A, 2 V, 60 at 1.5 A, 2 V, 12 at 3 A, 2 V | 300 at 10 mA, 2 V | 3000 | 1.3 mm | 3.1 mm | 2 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXT10 | Transistors | Si | 6,500 mg | 1.8 mm | ||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23-3 | NPN | 15 V | 40 V | 7.5 V | 110 mV | 145 MHz | 625 mW | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23-3 | NPN | 20 V | 40 V | 7.5 V | 90 mV | 160 MHz | 625 mW | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23-3 | NPN | 20 V | 40 V | 7.5 V | 90 mV | 160 MHz | 625 mW | - 55 C | Diodes Incorporated | Single | 2.5 A | 3000 | 1 mm | 3.05 mm | 2.5 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXT11N20 | Transistors | Si | 8 mg | 1.4 mm | ||||
|
|
поиск предложений
|
||||||||||||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | MSOP-8 | PNP | - 12 V | - 20 V | 7.5 V | - 150 mV | 85 MHz | 870 mW | - 55 C | Diodes Incorporated | Dual | - 3 A | 300 at 10 mA, 2 V, 300 at 1 A, 2 V, 200 at 3 A, 2 V, 20 at 12 A, 2 V | 300 at 10 mA, 2 V | 1000 | 0.95 mm | 3.1 mm | 3 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXT12 | Transistors | Si | 140 mg | 3.1 mm | ||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23-6 | NPN | 15 V | 40 V | 7.5 V | 200 mV | 72 MHz | 1.1 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23-6 | NPN | 20 V | 50 V | 7.5 V | 170 mV | 96 MHz | 1.1 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23-6 | NPN | 50 V | 100 V | 7.5 V | 145 mV | 115 MHz | 1.1 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23-6 | NPN | 50 V | 100 V | 7.5 V | 145 mV | 115 MHz | 1.1 W | - 55 C | Diodes Incorporated | Single | 4 A | 3000 | 1.3 mm | 3.1 mm | 4 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXT13N50 | Transistors | Si | 6,500 mg | 1.8 mm | ||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23-6 | PNP | - 12 V | - 29 V | 7.5 V | - 150 mV | 55 MHz | 1.1 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23-6 | PNP | - 20 V | - 25 V | 7.5 V | - 165 mV | 90 MHz | 1.1 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
Diodes Incorporated | Diodes Incorporated | 3000 | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Transistors | |||||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-23-6 | PNP | - 40 V | - 70 V | 7.5 V | - 175 mV | 115 MHz | 1.1 W | - 55 C |
